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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUX41 DESCRIPTION * Collector-Emitter Sustaining Voltage: VCEO(SUS) = 200V(Min) *High Current Capability *Good Linearity of hFE APPLICATIONS *Designed for high speed, high current, high power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO(SUS) VCEX VCER VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage VBE= -2.5V Collector-Emitter Voltage RBE= 100 Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=100 Junction Temperature Storage Temperature VALUE 250 200 250 240 7 15 20 3 120 200 -65~200 UNIT V V V V V A A A W PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.46 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEO ICEX IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product CONDITIONS IC= 200mA ; IB= 0, L= 25mH IE= 50mA; IC= 0 IC= 5A; IB= 0.5A B BUX41 MIN 200 7 TYP. MAX UNIT V V 1.2 1.6 2.0 1.0 1.0 5.0 1.0 15 8 8 45 V V V mA mA mA IC= 8A; IB= 1A B IC= 8A; IB= 1A B VCE= 160V; IB= 0 VCE= 250V; VBE= -1.5V VCE= 250V; VBE= -1.5V; TC= 125 VEB= 5V; IC=0 IC= 5A ; VCE= 4V IC= 8A ; VCE= 4V IC= 1A ; VCE= 15V MHz Switching Times; Resistive Laod Turn-on Time Storage Time Fall Time IC= 8A ;IB1= -IB2= 1A; VCC= 150V; RC= 18.75 0.6 1.5 0.4 s s s ton ts tf isc Websitewww.iscsemi.cn 2 |
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